Resist heating in mask fabrication with Gaussian EBL system

Wenbo Li; Pin Gao; Weisheng Yue; Tao Zhang; Bowen Zhao; Changtao Wang

doi:10.1117/12.3009484

29 December 2023 Resist heating in mask fabrication with Gaussian EBL system

Wenbo Li, Pin Gao, Weisheng Yue, Tao Zhang, Bowen Zhao, Changtao Wang

Proceedings Volume 12976, Eighth Asia Pacific Conference on Optics Manufacture and Third International Forum of Young Scientists on Advanced Optical Manufacturing (APCOM and YSAOM 2023); 129761Q (2023) https://doi.org/10.1117/12.3009484
Event: 8th Asia Pacific Conference on Optics Manufacture & 3rd International Forum of Young Scientists on Advanced Optical Manufacturing, 2023, Shenzhen, China

Abstract

Currently, high-resolution mask is mainly fabricated by electron-beam lithography (EBL), with which the resist heating by the electron-beam is unavoidable. It has been reported that the local temperature can berise up to 300 °C when a photomask is fabricated by a variable shaped beam (VSB) EBL¹, which may cause significant critical dimension (CD) variation if the heating effect is uncorrected. However, the heating effect in mask fabrication with Gaussian beam EBL has been rarely studied. It is important to understand the heating effect in the fabrication process of high-resolution photomask, so that necessary correction can be made to reduce the CD variation. In this paper, we report our study of resist heating in mask fabrication with Gaussian EBL system. A software TEMPATION (Temperature Simulation) was used for the simulation. In the simulation, the EBL system gaussian beam system with energy of 125 keV and current of 1 nA and 10 nA. Quartz and sapphire with thickness of 6.35 mm were used as substrates for the mask and simulated separately. Both the quartz and sapphire substrates were coated with 40 nm Cr and 100 nm e-beam resist. The simulations have shown that the temperature rise is about 2 °C for thequartz substrate and 0.6 °C for the sapphire substrates. The temperature rise by the Gaussian beam EBL is much lower than that of VSB reported (300 °C) due to the much lower beam current of the Gaussian beam than that of a VSB system.

(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Wenbo Li, Pin Gao, Weisheng Yue, Tao Zhang, Bowen Zhao, and Changtao Wang "Resist heating in mask fabrication with Gaussian EBL system", Proc. SPIE 12976, Eighth Asia Pacific Conference on Optics Manufacture and Third International Forum of Young Scientists on Advanced Optical Manufacturing (APCOM and YSAOM 2023), 129761Q (29 December 2023); https://doi.org/10.1117/12.3009484

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KEYWORDS

Electron beam lithography

Gaussian beams

Quartz

Sapphire

Vestigial sideband modulation

Mask making

Chromium

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