Dry etching of high-aspect ratio contact holes

Mark Wiepking; M. LeVan; Phyllis Mayo

doi:10.1117/12.48909

1 March 1991 Dry etching of high-aspect ratio contact holes

Mark Wiepking, M. LeVan, Phyllis Mayo

Proceedings Volume 1392, Advanced Techniques for Integrated Circuit Processing; (1991) https://doi.org/10.1117/12.48909
Event: Processing Integration, 1990, Santa Clara, CA, United States

Abstract

Patterning of highaspect ratio contact holes is required for 0. 5/ira technologies. High selectivity and anisotropic wall profiles are necessary for a successful process since large percentage overetches are required for planarized dielectric layers. This paper will discuss work in patterning high aspect ratio contact hole patterns using a Drytek 384T TRIODE etching system. The etching of O. 6/nn by l/nn and O. 6jnn by 2/sm contact hole structures has been investigated. Discussion of process variables which control anisotropic wall profiles will be presented.

Citation Download Citation

Mark Wiepking, M. LeVan, and Phyllis Mayo "Dry etching of high-aspect ratio contact holes", Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); https://doi.org/10.1117/12.48909

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