LH electron cyclotron resonance plasma source

K.-H. Kretschmer; Gerhard Lorenz; G. Castrischer; I. Kessler; P. Baumann

doi:10.1117/12.48919

1 March 1991 LH electron cyclotron resonance plasma source

K.-H. Kretschmer, Gerhard Lorenz, G. Castrischer, I. Kessler, P. Baumann

Proceedings Volume 1392, Advanced Techniques for Integrated Circuit Processing; (1991) https://doi.org/10.1117/12.48919
Event: Processing Integration, 1990, Santa Clara, CA, United States

Abstract

The further development in semiconductor technology toward smaller dimensions and higher densities calls for low-energy high-power plasma sources in etching and deposition as well. An ECR plasma source developed by Leybold (LH) with an effective diameter of 9" is described. The radially symmetric construction of the source as well as the chosen microwave input allows wafers with diameter up to 200 mm to be processed with high uniformity. Special empasise has been given to minimum particle and damage generation. Several etch processes are presented to demonstrate the application potential of the source.

Citation Download Citation

K.-H. Kretschmer, Gerhard Lorenz, G. Castrischer, I. Kessler, and P. Baumann "LH electron cyclotron resonance plasma source", Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); https://doi.org/10.1117/12.48919

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available