Defects in SIPOS film studied by ESR

Yun Zhen Wang; Yao Ling Pan

doi:10.1117/12.47336

1 November 1991 Defects in SIPOS film studied by ESR

Yun Zhen Wang, Yao Ling Pan

Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47336
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

In the present paper, we used the data of g-factor value, linewidth Hpp, and spin density Ns from ESR measurement to investigate the defects in SIPOS film. There are four defects related to the different Si tetrahedral structures Si - (Si₄ - YOY) in SIPOS film. These defects are named defect 1, defect 2, defect 3, and defect 4. The ESR spectrum found for a specific oxygen content is assumed to be a linear superposition of the resonance of these four defects. The g-value is the statistical average of four g-values' corresponding defects. Using the above model of defects, the variations of linewidth and spin densities of SIPOS film with different oxygen content and annealing conditions can be well described.

Citation Download Citation

Yun Zhen Wang and Yao Ling Pan "Defects in SIPOS film studied by ESR", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47336

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