Growth of rf-sputtered selenium thin films

Xiang Long Yuan; Szuk Wei Min; Zhi Yao Fang; Da Wei Yu; Lei Qi

doi:10.1117/12.47330

1 November 1991 Growth of rf-sputtered selenium thin films

Xiang Long Yuan, Szuk Wei Min, Zhi Yao Fang, Da Wei Yu, Lei Qi

Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47330
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

The growth process of selenium thin films deposited by RF sputtering on slide glass was investigated for various substrate temperatures by SEM. Droplet growth was observed at substrate temperature higher than 30 degree(s)C. The droplet density decreased but the size increased with increasing temperature. A thin layer under droplets was obtained that might be caused by secondary electro bombardment and radiation from the plasma and/or the contamination on substrate surface. The effect of substrate temperature on the growth of the thin layer was discussed.

Citation Download Citation

Xiang Long Yuan, Szuk Wei Min, Zhi Yao Fang, Da Wei Yu, and Lei Qi "Growth of rf-sputtered selenium thin films", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47330

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