Research on relaxation process of a-Si:H film photoconductivity and the trap effect

Dao Ben Gong

doi:10.1117/12.47253

1 November 1991 Research on relaxation process of a-Si:H film photoconductivity and the trap effect

Dao Ben Gong

Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47253
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

By using monochromatic light from the monochromator and super-resistance measurement instrument and function recorder, we measured the relaxation phenomena of the a-Si:H film photoconductivity and obtained some regularities. We propose that the relaxation time ((tau) ) according to exponential changes is mainly affected by minority carrier traps and the effect of majority carrier traps makes the photoconductivity relaxation process deviate from the exponential curve and greatly delays the actual relaxation time. We have not found so far any paper dealing with the different effects of these two types of traps.

Citation Download Citation

Dao Ben Gong "Research on relaxation process of a-Si:H film photoconductivity and the trap effect", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47253

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available