Study of photoelectric transformation process at p-PAn/n-Si interface

Renkuan Yuan; Yu Xue Liu; Hong Yuan; Yong Bin Wang; Xiang Qin Zheng; Jian Xu

doi:10.1117/12.47219

1 November 1991 Study of photoelectric transformation process at p-PAn/n-Si interface

Renkuan Yuan, Yu Xue Liu, Hong Yuan, Yong Bin Wang, Xiang Qin Zheng, Jian Xu

Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47219
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

Polyaniline (PAn) is a kind of stable semiconducting polymer. A p-n PAn/Si heterojunction has been prepared and the photoelectrical transformation process at the PAn/Si interface has been investigated. The factors affecting the photoelectrical characteristics of the PAn/Si heterojunction are discussed in this paper.

Citation Download Citation

Renkuan Yuan, Yu Xue Liu, Hong Yuan, Yong Bin Wang, Xiang Qin Zheng, and Jian Xu "Study of photoelectric transformation process at p-PAn/n-Si interface", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47219

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