ORION semiconductor optical detectors: research and development

Vladimir T. Khryapov; Vladimir P. Ponomarenko; V. G. Butkevitch; Igor I. Taubkin; Vitaly I. Stafeev; Sergey A. Popov; Vladimir V. Osipov

doi:10.1117/12.48789

1 December 1991 ORION semiconductor optical detectors: research and development

Vladimir T. Khryapov, Vladimir P. Ponomarenko, V. G. Butkevitch, Igor I. Taubkin, Vitaly I. Stafeev, Sergey A. Popov, Vladimir V. Osipov

Author Affiliations +

Proceedings Volume 1540, Infrared Technology XVII; (1991) https://doi.org/10.1117/12.48789
Event: San Diego, '91, 1991, San Diego, CA, United States

Abstract

Experimental and theoretical results of photosensitive semiconductor structures as well as the main developments of modern semiconductor photoresistors, photodiodes, including injection ones, based on polycrystalline and monocrystalline materials, multilayer structures and superlattices for visual far infrared spectral range are presented. Performance of multielement photodetectors based on lead chalcogenides, germanium and silicon, AIIIBV compounds, and CMT structures are described.

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Vladimir T. Khryapov, Vladimir P. Ponomarenko, V. G. Butkevitch, Igor I. Taubkin, Vitaly I. Stafeev, Sergey A. Popov, and Vladimir V. Osipov "ORION semiconductor optical detectors: research and development", Proc. SPIE 1540, Infrared Technology XVII, (1 December 1991); https://doi.org/10.1117/12.48789

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