Phonon and alloy disorder scattering in coherently strained SixGel-x/Si quantum wells used in photonic devices

P. K. Basu; S. K. Paul

doi:10.1117/12.636959

16 December 1992 Phonon and alloy disorder scattering in coherently strained SixGel-x/Si quantum wells used in photonic devices

P. K. Basu, S. K. Paul

Author Affiliations +

Proceedings Volume 1622, Emerging Optoelectronic Technologies; (1992) https://doi.org/10.1117/12.636959
Event: Emerging OE Technologies, Bangalore, India, 1991, Bangalore, India

Abstract

In strained Si Ge i-x/Si quantum wells alloy-disorder and intervalley phonon scatterings are found to be weak. The calculated values of mobility are higher than in bulk silicon and closer to the recent experimental data and are mainly limited by deformation potential acoustic phonon scattering. I .

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P. K. Basu and S. K. Paul "Phonon and alloy disorder scattering in coherently strained SixGel-x/Si quantum wells used in photonic devices", Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); https://doi.org/10.1117/12.636959

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