Paper
1 June 1992 Characterization and performance of advanced i-line photoresists for 0.5-micron CMOS technology
Jeffrey R. Johnson, Gregory J. Stagaman, John C. Sardella, Charles R. Spinner III, Fu-Tai Liou
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Abstract
An evaluation procedure for advanced I-line photoresists is presented. The evaluation is comprehensive in nature, including manufacturing and quality requirements as well as the usual patterning performance tests. The evaluation is divided into three general categories: Performance, Manufacturability, and Materials. These categories include a total of 23 individual performance tests and 15 evaluation criteria. A scoring method is described which assigns a numerical rating to the resist performance. Weighting constants contained in this procedure can be adjusted to vary the emphasis on particular measures of the photoresist performance.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeffrey R. Johnson, Gregory J. Stagaman, John C. Sardella, Charles R. Spinner III, and Fu-Tai Liou "Characterization and performance of advanced i-line photoresists for 0.5-micron CMOS technology", Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); https://doi.org/10.1117/12.130315
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KEYWORDS
Photoresist materials

Metals

Photoresist developing

Manufacturing

Optical lithography

Scanning electron microscopy

Silicon films

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