Free-carrier electro-optical effect in semiconductors

V. L. Malevich

doi:10.1117/12.147900

28 June 1993 Free-carrier electro-optical effect in semiconductors

V. L. Malevich

Proceedings Volume 1807, Photonic Switching; (1993) https://doi.org/10.1117/12.147900
Event: Topical Meeting on Photonic Switching, 1992, Minsk, Belarus

Abstract

The electric field effect on the free carrier absorption in semiconductors is considered on the basis of the quantum transport equation. In the quantum limit analyzed this effect is caused by the influence of the electric field on the electron-phonon interaction rather than by the hot carrier effect. Due to the dynamical origin this effect is characterized by the small response time of subpicosecond range.

Citation Download Citation

V. L. Malevich "Free-carrier electro-optical effect in semiconductors", Proc. SPIE 1807, Photonic Switching, (28 June 1993); https://doi.org/10.1117/12.147900

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available