Water effects on the properties of SiO2/PSG/SiO2 passivation of InSb

Yongqiang Pan

doi:10.1117/12.131273

26 October 1992 Water effects on the properties of SiO2/PSG/SiO2 passivation of InSb

Yongqiang Pan

Proceedings Volume 1814, Optical Sensors; (1992) https://doi.org/10.1117/12.131273
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan

Abstract

Using in situ stress measurement combined with infrared spectra and high frequency capacitance-voltage measurement, water effects on the properties of sio2/PSG/sio2 passivation of InSb have been investigated during the passivation film exposure to air after high vacuum annealing. Water absorption in the film gives rise to a compressive stress, causes the flat-band of the film's capacitance-voltage curve to shift toward positive and assists ions to diffuse into the film. These show that water absorption in the porous structure of the passivating film can be the cause of the instability of the film's properties.

Citation Download Citation

Yongqiang Pan "Water effects on the properties of SiO2/PSG/SiO2 passivation of InSb", Proc. SPIE 1814, Optical Sensors, (26 October 1992); https://doi.org/10.1117/12.131273

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