High-power AlGaInP visible laser diodes with both multiquantum barrier and strain-induced active layer

Kenji Ikeda; Satoshi Arimoto; Masao Aiga

doi:10.1117/12.144145

11 May 1993 High-power AlGaInP visible laser diodes with both multiquantum barrier and strain-induced active layer

Kenji Ikeda, Satoshi Arimoto, Masao Aiga

Proceedings Volume 1979, 1992 International Conference on Lasers and Optoelectronics; (1993) https://doi.org/10.1117/12.144145
Event: 1992 International Conference on Lasers and Optoelectronics, 1992, Bejing, China

Abstract

By employing both multi-quantum barrier (MQB) and strained InGaP active layer including strained multi-quantum well (MQW) into a 670 nm region visible (red) laser diode, cw output power of 60 mW in a fundamental transverse mode oscillation even at 100 degree(s)C has been realized.

Citation Download Citation

Kenji Ikeda, Satoshi Arimoto, and Masao Aiga "High-power AlGaInP visible laser diodes with both multiquantum barrier and strain-induced active layer", Proc. SPIE 1979, 1992 International Conference on Lasers and Optoelectronics, (11 May 1993); https://doi.org/10.1117/12.144145

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