Barrier layer metallization schemes for ULSI technologies

Gurtej S. Sandhu; Scott Meikle; Sung Kim; Trung Tri Doan

doi:10.1117/12.156530

15 September 1993 Barrier layer metallization schemes for ULSI technologies

Gurtej S. Sandhu, Scott Meikle, Sung Kim, Trung Tri Doan

Proceedings Volume 2090, Multilevel Interconnection: Issues That Impact Competitiveness; (1993) https://doi.org/10.1117/12.156530
Event: Microelectronic Processing '93, 1993, Monterey, CA, United States

Abstract

Deep sub micron high aspect ratio contacts used for ULSI require highly conformal Ti and TiN films for W contact plug technology. Collimated Ti sputtering has been shown to enhance the coverage of Ti at the bottom of the contacts which helps obtain low contact resistance. However, insufficient sidewall and bottom corner coverage results in failure of the TiN barrier during subsequent processing. Conformal CVD TiN with collimated Ti is proposed as a technology of choice for obtaining low resistance and highly reliable contacts for advanced ULSI applications.

Citation Download Citation

Gurtej S. Sandhu, Scott Meikle, Sung Kim, and Trung Tri Doan "Barrier layer metallization schemes for ULSI technologies", Proc. SPIE 2090, Multilevel Interconnection: Issues That Impact Competitiveness, (15 September 1993); https://doi.org/10.1117/12.156530

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