Reactively sputtered coherent TiN process for sub-0.5-um technology

Girish A. Dixit; Peter J. Wright; Scott Poarch; Robert H. Havemann; Ken Ngan; Jaim Nulman; H. Kieu; A. Tepman

doi:10.1117/12.156523

15 September 1993 Reactively sputtered coherent TiN process for sub-0.5-μm technology

Girish A. Dixit, Peter J. Wright, Scott Poarch, Robert H. Havemann, Ken Ngan, Jaim Nulman, H. Kieu, A. Tepman

Proceedings Volume 2090, Multilevel Interconnection: Issues That Impact Competitiveness; (1993) https://doi.org/10.1117/12.156523
Event: Microelectronic Processing '93, 1993, Monterey, CA, United States

Abstract

TiN films were sputtered deposited through a collimating medium under different conditions where the sputter target was maintained in nitrided and non-nitrided modes. In-situ rapid thermal (RTP) annealing was done in an applied materials metal anneal chamber (MAC) integrated with the Endura physical vapor deposition (PVD) system. The barrier properties of these films were evaluated for tungsten plug application. Contact resistances and junction leakage data are presented. It is seen that the TiN films deposited in the non-nitrided mode possess excellent barrier properties. This method of deposition offers significantly improved wafer throughputs for coherent sputtering of TiN. The MAC offers an excellent alternative to the conventional furnace annealing approach for contact silicidation and provides a means for improving productivity.

Citation Download Citation

Girish A. Dixit, Peter J. Wright, Scott Poarch, Robert H. Havemann, Ken Ngan, Jaim Nulman, H. Kieu, and A. Tepman "Reactively sputtered coherent TiN process for sub-0.5-μm technology", Proc. SPIE 2090, Multilevel Interconnection: Issues That Impact Competitiveness, (15 September 1993); https://doi.org/10.1117/12.156523

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