Paper
31 October 1994 Photoluminescence characterization of silicon subjected to various industrial treatments
Mikhail Ya. Valakh, Galina Yu. Rudko, N. I. Shakhraychuk
Author Affiliations +
Proceedings Volume 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1994) https://doi.org/10.1117/12.191971
Event: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics: International Workshop, 1993, Kiev, Ukraine
Abstract
Photoluminescence investigations of silicon subjected to such industrial treatments as implantation, high temperature postimplantation annealing, treatment in high frequency discharge plasma, as well as the prolonged thermal annealing with the formation of thermal donors were carried out. It was shown that photoluminescence can be used for direct observation of the implanted impurity activation under various postimplantation treatments. Photoluminescence also proved to be useful for indirect control of thermal donors generation in Si:Ge.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mikhail Ya. Valakh, Galina Yu. Rudko, and N. I. Shakhraychuk "Photoluminescence characterization of silicon subjected to various industrial treatments", Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); https://doi.org/10.1117/12.191971
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KEYWORDS
Luminescence

Annealing

Silicon

Phosphorus

Excitons

Germanium

Boron

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