Femtosecond relaxation of highly photo-excited carriers in GaAs

N. Nintunze; Mohamed A. Osman

doi:10.1117/12.175900

6 May 1994 Femtosecond relaxation of highly photo-excited carriers in GaAs

N. Nintunze, Mohamed A. Osman

Proceedings Volume 2142, Ultrafast Phenomena in Semiconductors; (1994) https://doi.org/10.1117/12.175900
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Ultrafast relaxation of photo-excited electrons in p-doped and intrinsic GaAs has been investigated using the Monte Carlo method. Dynamic screening of the carrier-carrier (c-c) interaction has been implemented using a momentum and frequency dependent dielectric function. Compared to the static c-c scattering model, the current approach results in faster cooling of the electron-hole plasma, due to enhanced carrier-carrier scattering rates. In p- GaAs, the energy relaxation shows that the electron-hole plasma (EHP) cools faster with increasing hole concentration. The transient luminescence intensity and the effective carrier temperature computed from luminescence spectra compare favorably with experimental data.

Citation Download Citation

N. Nintunze and Mohamed A. Osman "Femtosecond relaxation of highly photo-excited carriers in GaAs", Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); https://doi.org/10.1117/12.175900

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