Bessel function and perturbation analyses of the FM and IM behavior of a directly modulated semiconductor laser

Jean Le Bihan; G. Yabre

doi:10.1117/12.176621

1 June 1994 Bessel function and perturbation analyses of the FM and IM behavior of a directly modulated semiconductor laser

Jean Le Bihan, G. Yabre

Author Affiliations +

Proceedings Volume 2148, Laser Diode Technology and Applications VI; (1994) https://doi.org/10.1117/12.176621
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Harmonic distortion in a semiconductor laser is described with the aid of a nonlinear differential equation for the photon density, derived from the rate equations. Analytical results are obtained by linearization, and curves are presented showing the fundamental, second-order harmonic and third-order harmonic IM and FM responses. The present development provides a significant improvement in the third-order harmonic characteristics. The comparison between Bessel functions analysis and the perturbation method is quite successful.

Citation Download Citation

Jean Le Bihan and G. Yabre "Bessel function and perturbation analyses of the FM and IM behavior of a directly modulated semiconductor laser", Proc. SPIE 2148, Laser Diode Technology and Applications VI, (1 June 1994); https://doi.org/10.1117/12.176621

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