Paper
9 September 1994 Crystal-free and low-flow-angle ILD by using in situ SACVD/PE BPSG for 0.5-um application
Hung-Chi Yen, Ben-Yih Jin, Cliff Wong, Peter Chow, Daniel Yen, Joseph Hu, Joe S. Su, Jean Wang
Author Affiliations +
Abstract
As the technology pushes down to half-micron or below, a low flow angle BPSG film for pre- metal dielectric (PMD) becomes necessary. With high BP concentration BPSG, for example 4 X 6, low flow angle can be achieved after proper reflow. The drawback is that, frequently, BPSG crystal appears at smaller poly spacing. The combined sub-atmosphere chemical vapor deposition (SACVD) and BPSG films through in-situ deposition in applied materials P-5000D system was implemented to not only improve reflow angle but also suppress the crystal formation at any poly space. A crystal-free with 11 degree(s) flow angle PMD was achieved by using 4KA SACVD and 5KA BPSG over 6000A poly lines. A detailed SACVD/BPSG process and the comparison of BPSG reflow characterization with and without SACVD are presented.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hung-Chi Yen, Ben-Yih Jin, Cliff Wong, Peter Chow, Daniel Yen, Joseph Hu, Joe S. Su, and Jean Wang "Crystal-free and low-flow-angle ILD by using in situ SACVD/PE BPSG for 0.5-um application", Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); https://doi.org/10.1117/12.186062
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Crystals

Plasma enhanced chemical vapor deposition

Oxides

Chemical vapor deposition

Dielectrics

Chemical mechanical planarization

Deposition processes

RELATED CONTENT


Back to Top