Pulsed laser deposition for CdTe-based photovoltaics

Alvin D. Compaan; Miranda M. Pearce; P. M. Voyles; D. Spry; Zhirong Feng; Andreas Fischer; Meilun Shao; Randy G. Bohn

doi:10.1117/12.206255

10 April 1995 Pulsed laser deposition for CdTe-based photovoltaics

Alvin D. Compaan, Miranda M. Pearce, P. M. Voyles, D. Spry, Zhirong Feng, Andreas Fischer, Meilun Shao, Randy G. Bohn

Proceedings Volume 2403, Laser-Induced Thin Film Processing; (1995) https://doi.org/10.1117/12.206255
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

One of the major advantages of pulsed laser deposition (PLD) for thin- film growth is the use of simply prepared solid targets. Especially for our work with CdTe-related materials in photovoltaics, target preparation by cold pressing from high purity powders works well, partly because the II-VI semiconductors such as CdTe, CdS, and ZnTe do not create serious problems with particulate generation in the PLD plume. Thus we have used mixtures of these binary compounds to produce ternary alloy films with good results. These alloy films are being used to produce band-gap-graded structures in PV cells. In addition, the PLD technique lends itself readily to the preparation of doped films again through appropriate target mixing such as elemental copper mixed into ZnTe or elemental indium mixed into CdS. In addition, doping from the vapor phase by reactive deposition of CdTe in the presence of small pressures of O₂ has been successful in reducing the normally very high resistivity of the polycrystalline CdTe Films. Electrical measurements, Raman and photoluminescence, x-ray diffraction, and scanning electron microscopy results from these materials will be presented.

Citation Download Citation

Alvin D. Compaan, Miranda M. Pearce, P. M. Voyles, D. Spry, Zhirong Feng, Andreas Fischer, Meilun Shao, and Randy G. Bohn "Pulsed laser deposition for CdTe-based photovoltaics", Proc. SPIE 2403, Laser-Induced Thin Film Processing, (10 April 1995); https://doi.org/10.1117/12.206255

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