Materials delivery challenges in ULSI processing

James F. Loan; Laura A. Sullivan; John J. Sullivan

doi:10.1117/12.221326

19 September 1995 Materials delivery challenges in ULSI processing

James F. Loan, Laura A. Sullivan, John J. Sullivan

Proceedings Volume 2637, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing; (1995) https://doi.org/10.1117/12.221326
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

In the 25-year history of semiconductor device processing never have we experienced such exciting and challenging times as now relative to the materials aspects of deposition processing technology. With each new milestone in the device processing roadmaps comes new and challenging demands on our ability to deposit electromigration barriers, higher conductivity/lower resistivity metal interconnects, dramatically lower dielectric constant interlevel dielectrics, and higher dielectric constant gate oxides. Our ability to achieve success in these areas is dependent on the cleanliness, performance, and reliability of the materials delivery methods chosen to perform that task.

Citation Download Citation

James F. Loan, Laura A. Sullivan, and John J. Sullivan "Materials delivery challenges in ULSI processing", Proc. SPIE 2637, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing, (19 September 1995); https://doi.org/10.1117/12.221326

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