Advances in infrared spectroscopic methods for epitaxial film characterization

Ronald A. Carpio; Burt W. Fowler; Wolfgang Theiss

doi:10.1117/12.221212

18 September 1995 Advances in infrared spectroscopic methods for epitaxial film characterization

Ronald A. Carpio, Burt W. Fowler, Wolfgang Theiss

Proceedings Volume 2638, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II; (1995) https://doi.org/10.1117/12.221212
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

Recent developments in the measurement of epitaxial silicon thin films enable the doping transition width and the substrate carrier concentration to be measured in addition to the film thickness. A model has been developed to simulate the reflectance spectra of lightly-doped epitaxial silicon films deposited on doped silicon substrates in both the mid- and far-infrared spectral regions. Using a model-based approach eliminates the need for instrument calibration and the addition of a bias to the measurement results. Epitaxial films ranging in thickness from 0.1 to 5.0 micrometers were analyzed. Results using a double-side polished silicon wafer as the reference were similar to those using an absolute gold reference. Thickness and doping transition width measurements are consistent with results obtained using other techniques.

Citation Download Citation

Ronald A. Carpio, Burt W. Fowler, and Wolfgang Theiss "Advances in infrared spectroscopic methods for epitaxial film characterization", Proc. SPIE 2638, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II, (18 September 1995); https://doi.org/10.1117/12.221212

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