MOS and MOSFET with transition metal oxides

Shelton Fu; Takeshi Egami

doi:10.1117/12.250262

5 July 1996 MOS and MOSFET with transition metal oxides

Shelton Fu, Takeshi Egami

Proceedings Volume 2697, Oxide Superconductor Physics and Nano-Engineering II; (1996) https://doi.org/10.1117/12.250262
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

MOS and MOSFET structures were constructed with a TiO₂ single crystal as a substrate. It was demonstrated that the n-type carriers injected by the applied gate field have a much higher mobility than the chemically doped carriers, by nearly two orders of magnitude. This result suggests that the intrinsic carrier mobility in TiO₂ may be substantially higher than usually assumed. Other MOSFET effects including the nonlinear optical effects are discussed.

Citation Download Citation

Shelton Fu and Takeshi Egami "MOS and MOSFET with transition metal oxides", Proc. SPIE 2697, Oxide Superconductor Physics and Nano-Engineering II, (5 July 1996); https://doi.org/10.1117/12.250262

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