Xe2 excimer lamp (172 nm) for optical lithography

Hiroyoshi Tanabe; Yuko Seki; Jun-ichi Yano; Jun Ushioda; Yukio Ogura

doi:10.1117/12.240967

7 June 1996 Xe₂ excimer lamp (172 nm) for optical lithography

Hiroyoshi Tanabe, Yuko Seki, Jun-ichi Yano, Jun Ushioda, Yukio Ogura

Proceedings Volume 2726, Optical Microlithography IX; (1996) https://doi.org/10.1117/12.240967
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

A Xe₂ excimer lamp (172 nm) has been used for submicrometer patterning of photoresist films. We resolved 0.35 micrometers lines and spaces using a contact printing system. We exposed a chemically amplified photoresist customized for ArF. The sensitivity of the photoresist was 130 mJ/cm$=2) or about ten times smaller than the sensitivity for ArF.

Citation Download Citation

Hiroyoshi Tanabe, Yuko Seki, Jun-ichi Yano, Jun Ushioda, and Yukio Ogura "Xe₂ excimer lamp (172 nm) for optical lithography", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); https://doi.org/10.1117/12.240967

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