In-situ thin film stress measurement using high-stability portable holographic interferometer

George Eugene Dovgalenko; M. Shahid Haque; Anatoli Kniazkov; Yuri I. Onischenko; Gregory J. Salamo; Hameed A. Naseem

doi:10.1117/12.250758

18 September 1996 In-situ thin film stress measurement using high-stability portable holographic interferometer

George Eugene Dovgalenko, M. Shahid Haque, Anatoli Kniazkov, Yuri I. Onischenko, Gregory J. Salamo, Hameed A. Naseem

Proceedings Volume 2782, Optical Inspection and Micromeasurements; (1996) https://doi.org/10.1117/12.250758
Event: Lasers, Optics, and Vision for Productivity in Manufacturing I, 1996, Besancon, France

Abstract

A stress in thin film SiO₂ was detected using high stability portable holographic interferometer. A stress relaxation phenomenon in this film thickness of 0.5 micrometers on Si wafer has been observed. This phenomenon does not exist in film with thickness of 1 micrometers . The advantages of the proposed measured technique and results are discussed.

Citation Download Citation

George Eugene Dovgalenko, M. Shahid Haque, Anatoli Kniazkov, Yuri I. Onischenko, Gregory J. Salamo, and Hameed A. Naseem "In-situ thin film stress measurement using high-stability portable holographic interferometer", Proc. SPIE 2782, Optical Inspection and Micromeasurements, (18 September 1996); https://doi.org/10.1117/12.250758

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