Multifractal point defect clusters in subsurface damaged layer of semiconductor wafers

Alexander P. Fedtchouk; Ruslana A. Rudenko; A. A. Fedtchouk

doi:10.1117/12.250845

12 September 1996 Multifractal point defect clusters in subsurface damaged layer of semiconductor wafers

Alexander P. Fedtchouk, Ruslana A. Rudenko, A. A. Fedtchouk

Proceedings Volume 2874, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis II; (1996) https://doi.org/10.1117/12.250845
Event: Microelectronic Manufacturing 1996, 1996, Austin, TX, United States

Abstract

We have constructed an automated laser scanning complex oriented to semiconductor wafers defectiveness monitoring. The surface photo-voltage method has proved to be sensitive to various types of surface contamination and damages. The fractal approach used for the first time for theoretically maximal value of VLSI yield estimation has demonstrated high prognostic ability.

Citation Download Citation

Alexander P. Fedtchouk, Ruslana A. Rudenko, and A. A. Fedtchouk "Multifractal point defect clusters in subsurface damaged layer of semiconductor wafers", Proc. SPIE 2874, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis II, (12 September 1996); https://doi.org/10.1117/12.250845

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