Green photoluminescence from nc-Ge particles

Peiyi Chen; Huaizhe Xu; Meifang Zhu; Boyuan Hou

doi:10.1117/12.253340

30 September 1996 Green photoluminescence from nc-Ge particles

Peiyi Chen, Huaizhe Xu, Meifang Zhu, Boyuan Hou

Proceedings Volume 2892, Display Devices and Systems; (1996) https://doi.org/10.1117/12.253340
Event: Photonics China '96, 1996, Beijing, China

Abstract

Nanocrystalline Ge particles embedded in glassy SiO₂ matrix were prepared by rf cosputtering technique and the followed thermal annealing at 600 degree(s)C. Multiple-peak structure around 2.26 ev in photoluminescence spectrum of annealed sample was observed at room temperature, and variation of PL with excitation wavelengths in a range from 457.9 nm to 514.5 nm has been systematically measured and investigated. Raman scattering and X-ray photoelectron spectroscopy measurements strongly suggested existence of Ge nanocrystalline particulates in the SiO₂ matrices. The size of nc-Ge is dependent on thermal treatment condition. A preliminary discussion about the origin of such visible photoluminescence phenomenon is presented.

Citation Download Citation

Peiyi Chen, Huaizhe Xu, Meifang Zhu, and Boyuan Hou "Green photoluminescence from nc-Ge particles", Proc. SPIE 2892, Display Devices and Systems, (30 September 1996); https://doi.org/10.1117/12.253340

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