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20 February 1998 Effect of buffer layer on the growth of GaN films on sapphire
Ke Xu, Rongsheng Qiu, Jun Xu, Zujie Fang, Peizhen Deng, Xiaoshan Wu, Mu Wang, Naiben Ming
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Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300713
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China
Abstract
The influence of buffer layer on the growth of GaN epilayer was investigated. Five matching orientations were identified when GaN was directly grown on the sapphire (0001) plane. The use of low-temperature buffer layer significantly improved the epitaxial film quality and the surface morphology. The optimal thickness of buffer layer was about 18 nm - 20 nm in the present growth condition.
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Ke Xu, Rongsheng Qiu, Jun Xu, Zujie Fang, Peizhen Deng, Xiaoshan Wu, Mu Wang, and Naiben Ming "Effect of buffer layer on the growth of GaN films on sapphire", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); https://doi.org/10.1117/12.300713
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KEYWORDS
Gallium nitride
Sapphire
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