Oxidized characteristics of hydrogenated nanocrystalline silicon

Ming Liu; Hongfei Dou; Yuliang L. He; Xinliu Jiang

doi:10.1117/12.300728

20 February 1998 Oxidized characteristics of hydrogenated nanocrystalline silicon

Ming Liu, Hongfei Dou, Yuliang L. He, Xinliu Jiang

Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300728
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China

Abstract

The hydrogenated nano-crystalline silicon (nc-Si:H) films are prepared using conventional plasma enhanced chemical-vapor- deposition (PECVD) system and oxidized by plasma and high- temperature treatment which all doped oxygen into nc-Si:H film. The contents of hydrogen and oxygen, the infrared absorption spectra, photo-luminescence (PL) spectra are measured. The PL peak wavelengths blue-shift from 695 nm to 660 nm at 77 K, but there are still no obvious visible PL at room-temperature through oxidized post-processing. The bonded forms of oxygen in nc-Si:H are changed with different oxidized way and their influence on PL spectra are also investigated.

Citation Download Citation

Ming Liu, Hongfei Dou, Yuliang L. He, and Xinliu Jiang "Oxidized characteristics of hydrogenated nanocrystalline silicon", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); https://doi.org/10.1117/12.300728

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