Controlled thickness and dielectric constant titanium-doped SiO2 thin films on silicon by sol gel process

H. L. Liu; S. S. Wang; Yan Zhou; Yee Loy Lam; Yuen Chuen Chan; Chan Hin Kam

doi:10.1117/12.280583

18 August 1997 Controlled thickness and dielectric constant titanium-doped SiO₂ thin films on silicon by sol gel process

H. L. Liu, S. S. Wang, Yan Zhou, Yee Loy Lam, Yuen Chuen Chan, Chan Hin Kam

Author Affiliations +

Proceedings Volume 3184, Microelectronic Packaging and Laser Processing; (1997) https://doi.org/10.1117/12.280583
Event: ISMA '97 International Symposium on Microelectronics and Assembly, 1997, Singapore, Singapore

Abstract

In this paper, we report the preparation of crack-free relatively thick SiO₂-TiO₂ thin films on silicon substrates using the sol-gel spin-coating method. The influence of the process parameters on the quality of the film, such as the solution condition, the spin-coating speed, the heat treatment temperature and time, have been studied. We found that the cracking of the film could be avoided by selecting the right sol composition ratios, adding PVA to the sold and properly controlling the heat treatment. Most importantly, we discovered that by polishing the edges of the film after the deposition of each single layer, the number of such layers that deposited without crack formation could be substantially increased. The refractive index profile and thickness of the film have been determined using prism coupling technique and the inverse WKB method. The refractive index was found to depend on the content of TiO₂ as well as the heat treatment condition. Using an AFM, the surface morphology of the film was found to be good.

Citation Download Citation

H. L. Liu, S. S. Wang, Yan Zhou, Yee Loy Lam, Yuen Chuen Chan, and Chan Hin Kam "Controlled thickness and dielectric constant titanium-doped SiO₂ thin films on silicon by sol gel process", Proc. SPIE 3184, Microelectronic Packaging and Laser Processing, (18 August 1997); https://doi.org/10.1117/12.280583

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