Practical approach to evaluating mask CD uniformity patterned by a variable-shaped beam

Shusuke Yoshitake; Yoji Ogawa; Hideaki Sakurai; Masamitsu Itoh; Iwao Higashikawa; Noriaki Nakayamada; Kazuto Matsuki; Shuichi Tamamushi

doi:10.1117/12.301200

12 February 1997 Practical approach to evaluating mask CD uniformity patterned by a variable-shaped beam

Shusuke Yoshitake, Yoji Ogawa, Hideaki Sakurai, Masamitsu Itoh, Iwao Higashikawa, Noriaki Nakayamada, Kazuto Matsuki, Shuichi Tamamushi

Author Affiliations +

Proceedings Volume 3236, 17th Annual BACUS Symposium on Photomask Technology and Management; (1997) https://doi.org/10.1117/12.301200
Event: 17th Annual BACUS Photomask Technology and Management, 1997, Redwood City, CA, United States

Abstract

CD uniformity to be patterned by electron-beam (EB) writing system with a variable-shaped beam was evaluated. The experimental EB writing system, EX-8D, was used under conditions of current density of 20 A/cm² and acceleration voltage of 50 keV. Quartz reticles coated with positive tone resist ZEP7000^TM (Nippon Zeon Co., Ltd.) were applied. Test patterns of 1-micrometer-width design were written by shaped beam shots of 1 micrometer square with different exposure doses. Since higher measurement repeatability was confirmed, line width of test patterns without shot stitching points was measured by Nikon XY-3I with a circle-spot probe of 1 micrometer. Line width of clear patterns on resist film was measured after development, and line width of clear patterns on chrome (Cr) film of one mask was measured at same points after wet-etching. The other mask was measured at the same points after dry-etching process by conventional reactive ion etching (RIE). Certain comparisons in this study indicate the importance of evaluating CD uniformity on Cr film after dry- etching process. Expect for resist heating contribution by four-pass writing method, the uncertainty of CD error was quantified as follows: 4 nm (3(sigma) ) on resist film at the applied dose of 19 (mu) C/cm², and 4 nm (3(sigma) ) on Cr film at the applied dose of 27 (mu) C/cm².

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Shusuke Yoshitake, Yoji Ogawa, Hideaki Sakurai, Masamitsu Itoh, Iwao Higashikawa, Noriaki Nakayamada, Kazuto Matsuki, and Shuichi Tamamushi "Practical approach to evaluating mask CD uniformity patterned by a variable-shaped beam", Proc. SPIE 3236, 17th Annual BACUS Symposium on Photomask Technology and Management, (12 February 1997); https://doi.org/10.1117/12.301200

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KEYWORDS

Chromium

Beam shaping

Photomasks

Reactive ion etching

Critical dimension metrology

Etching

Optical lithography

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