Paper
14 September 1998 High-energy-per-pulse excimer laser for silicon annealing
Bruno Godard, Dorian Zahorski
Author Affiliations +
Abstract
Forty-five joule per pulse XeCl laser with good homogeneity (plus or minus 1%) and repeatability (plus or minus 1%) allow to increase the quality and decrease the cost of annealing of amorphous Silicon compared to Solid Phase Crystallization and Scanning Excimer Laser Annealing.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bruno Godard and Dorian Zahorski "High-energy-per-pulse excimer laser for silicon annealing", Proc. SPIE 3343, High-Power Laser Ablation, (14 September 1998); https://doi.org/10.1117/12.321588
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Excimer lasers

Annealing

Amorphous silicon

Silicon

Crystals

Semiconductor lasers

Pulsed laser operation

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