Smooth vanadium-nitride layers created on silicon substrates by pulse laser deposition method

Laszlo Nanai; Robert Vajtai; J. Kiss; Armando Luches; Ion N. Mihailescu

doi:10.1117/12.320986

19 August 1998 Smooth vanadium-nitride layers created on silicon substrates by pulse laser deposition method

Laszlo Nanai, Robert Vajtai, J. Kiss, Armando Luches, Ion N. Mihailescu

Proceedings Volume 3573, OPTIKA '98: 5th Congress on Modern Optics; (1998) https://doi.org/10.1117/12.320986
Event: OPTIKA '98: Fifth Congress on Modern Optics, 1998, Budapest, Hungary

Abstract

Pulsed Laser Deposition (PLD) of vanadium-nitride (V₂N, V₁₀N₇) films on Si substrates have been carried out under influence of series of UV (excimer) laser pulses ((lambda) equals 308 nm, (tau) _FWHM equals 25 ns) in NH₃ atmosphere of a few mbars. In the reaction cell the Si target has been placed to be parallel to V sheet at angle of 45 degree(s) to the incident laser beam, and the plasma plume induced by laser pulse reached the target close perpendicularly. The number of shots at fluxes of 30 J/cm² were varied between 100 and 5000. Rutherford Back- Scattering studies revealed that under influence of laser pulses at Si layer V₂N layers of 100 nm thickness were formed, while the composition of the layer closer atmosphere was V₁₀N₇ of 50 nm thickness (in average). In some cases we observed layers of VNCO and V₁₀N₇C₅. Atomic Force Microscopy measurements revealed a formation of quite smooth surfaces with roughness of less than 10 nm. A characteristic wave-like structure with period of 3 - 5 nm was able to be observed in some cases. XPS examinations showed the existence of well defined peaks of V(2p) lines at 516 eV and 513 eV. Also we observed lines of N(1s) at 397 eV, O(1s) at 529 eV and C(1s) at 284 eV. From these investigations it might be concluded that PLD technique allows growing smooth VN layers on Si with a little, but measurable contamination of carbon and oxygen.

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Laszlo Nanai, Robert Vajtai, J. Kiss, Armando Luches, and Ion N. Mihailescu "Smooth vanadium-nitride layers created on silicon substrates by pulse laser deposition method", Proc. SPIE 3573, OPTIKA '98: 5th Congress on Modern Optics, (19 August 1998); https://doi.org/10.1117/12.320986

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KEYWORDS

Silicon

Vanadium

Pulsed laser deposition

Atomic force microscopy

Semiconductor lasers

Plasma

Pulsed laser operation

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