Paper
14 June 1999 CD-SEM precision: improved procedure and analysis
Mina Menaker
Author Affiliations +
Abstract
Accurate precision assessment becomes increasingly important as we proceed along the SIA road map, in to more advanced processes and smaller critical dimensions. Accurate precision is necessary in order to determine the P/T ratio which is used to decide whether a specific CD-SEM is valid for controlling a specific process. The customer's needs, as been presented by the SEMATECH Advanced Metrology Advisory Group, are to receive a detailed precision report, in the form of a full repeatability and reproducibility (RR) analysis. The 3 sigma single tool RR, of an in-line SEM, are determined in the same operational modes as used in production, and should include the effects of time and process variants on the SEM performance. We hereby present an RR procedure by a modulate approach which enables the user extending the evaluation according to her/his needs. It includes direct assessment of repeatability, reproducibility and stability analysis. It also allows for a study of wafer non homogeneity, induced process variation and a measured feature type effect on precision. The procedure is based on the standard ISO RR procedure, and includes a modification for a correct compensation for bias, or so called measurement turned. A close examination of the repeatability and reproducibility variations, provides insight to the possible sources of those variations, such as S/N ratio, SEM autofocus mechanism, automation etc. For example, poor wafer alignment might not effect the repeatability, but severally reduce reproducibility. Therefore the analysis is a key to better understanding and improving of CD-SEM performance, on production layers. The procedure is fully implemented on an automated CD-SEM, providing on line precision assessment. RR < 1 nm has been demonstrated on well defined resist and etched structures. Examples of the automatic analysis results, using the new procedure are presented.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mina Menaker "CD-SEM precision: improved procedure and analysis", Proc. SPIE 3677, Metrology, Inspection, and Process Control for Microlithography XIII, (14 June 1999); https://doi.org/10.1117/12.350816
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KEYWORDS
Scanning electron microscopy

Semiconducting wafers

Standards development

Process control

Metrology

Finite element methods

Optical alignment

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