Developer concentration influence on DUV process

Tsu-Yu Chu; Kun-Pi Cheng

doi:10.1117/12.350227

11 June 1999 Developer concentration influence on DUV process

Tsu-Yu Chu, Kun-Pi Cheng

Proceedings Volume 3678, Advances in Resist Technology and Processing XVI; (1999) https://doi.org/10.1117/12.350227
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

Currently, TMAH 2.38 percent concentration developer is popular to run photo process form g-line, I-line to DUV. For next generation photo process, the PR thickness will be thinner, CD and PR profile control are more important, so developer process will be more critical. The influence of developer concentration on DUV process performance has been investigated in this paper. We have tested 5 samples of TMAH concentration developer from 1.6 percent to 2.38 percent with one kind of DUV photoresist. The data of 0.25 micrometers L/S and 0.3 micrometers hole of masking linearity, resolution, total exposure latitude, focus latitude, and resists profile have been collected and analyzed. The optimal concentration of developer is described. Besides, 10 DUV photoresist with optimal concentration developer are tested and compared with general developer. Some chemical structures of DUV photoresist are also discussed in this paper.

Citation Download Citation

Tsu-Yu Chu and Kun-Pi Cheng "Developer concentration influence on DUV process", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350227

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