Photoluminescence studies of Czochralski-grown silicon pressure-annealed at <=1000 K

Andrzej Misiuk; Hancza B. Surma

doi:10.1117/12.342997

24 March 1999 Photoluminescence studies of Czochralski-grown silicon pressure-annealed at <=1000 K

Andrzej Misiuk, Hancza B. Surma

Proceedings Volume 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications; (1999) https://doi.org/10.1117/12.342997
Event: International Conference on Solid State Crystals '98, 1998, Zakopane, Poland

Abstract

The effect of annealing at <EQ 1000 K under enhanced argon pressure, HP, up to 1.6 GPa on photoluminescence, PL, and electrical properties of Cz-Si was investigated. The PL lines, related to presence of thermal donors, TDs, were detected at 2 K at (1.08 - 1.09) eV for the samples with interstitial oxygen concentration, c_o, in the (8 - 11) X 10¹⁷ cm^-3 range, treated at 720 K - HP, whereas at 300 K the PL band at about 0.79 eV was observed. The 0.79 eV PL band intensity increased with c_o but decreased with HP; the treatment at HP - 720 K for 10 h of the samples with before-created TDs also resulted in decreased intensity of the 0.79 eV band PL at 0.9 eV was observed at 2 K for the sample pre-annealed at 1000 K and afterwards pressure-treated at 920 K - 1.6 GPa, whereas at 300 K, this sample indicated the broad Pl peak at 0.86 eV. Presence of `additional' defects in Cz-Si (introduced by hydrogen implantation) caused suppression of PL after annealing at 720 K -10⁵/1.2 X 10⁹ Pa for 10 h, whereas the hydrogen plasma etched samples indicated detectable band-to-band PL at about 1.1 eV. Qualitative explanation of observed effects was proposed.

Citation Download Citation

Andrzej Misiuk and Hancza B. Surma "Photoluminescence studies of Czochralski-grown silicon pressure-annealed at <=1000 K", Proc. SPIE 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications, (24 March 1999); https://doi.org/10.1117/12.342997

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