n-type doping of GaSb crystals in ionized hydrogen atmosphere

Bedrich Stepanek; Vera Sestakova; Jaroslav Sestak

doi:10.1117/12.342975

24 March 1999 n-type doping of GaSb crystals in ionized hydrogen atmosphere

Bedrich Stepanek, Vera Sestakova, Jaroslav Sestak

Proceedings Volume 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications; (1999) https://doi.org/10.1117/12.342975
Event: International Conference on Solid State Crystals '98, 1998, Zakopane, Poland

Abstract

GaSb crystals highly doped with tellurium were grown using the Czochralski method without encapsulant in the flowing atmosphere of ionized hydrogen. The inherent free carrier concentration was several times lower than by using the molecular hydrogen. It was shown that the ionized atmosphere served as a passivator in the wider range of tellurium concentration and that the equilibrium between passivated and active donors was created according to the ratio of p- to n-type dopants in the starting melt.

Citation Download Citation

Bedrich Stepanek, Vera Sestakova, and Jaroslav Sestak "n-type doping of GaSb crystals in ionized hydrogen atmosphere", Proc. SPIE 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications, (24 March 1999); https://doi.org/10.1117/12.342975

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