Formation of heavily boron-doped nanolayer in silicon by powerful ion irradiation

Andrej P. Kokhanenko; Aleksander G. Korotaev; Aleksander V. Voitsekhovskii; Ivan Grushin; Mikhail S. Opekunov; Gennady E. Remnev

doi:10.1117/12.360564

1 September 1999 Formation of heavily boron-doped nanolayer in silicon by powerful ion irradiation

Andrej P. Kokhanenko, Aleksander G. Korotaev, Aleksander V. Voitsekhovskii, Ivan Grushin, Mikhail S. Opekunov, Gennady E. Remnev

Author Affiliations +

Proceedings Volume 3881, Microelectronic Device Technology III; (1999) https://doi.org/10.1117/12.360564
Event: Microelectronic Manufacturing '99, 1999, Santa Clara, CA, United States

Abstract

An opportunity of forming heavily doped boron layers in silicon is analyzed in this work for variation of potential barrier height on the metal-semiconductor interfaces. Implantation of boron atoms in silicon samples was made by recoil method, inducing Al ion beams bombardment with current density 4-10 A/cm² and 30-150 keV energy. An analysis of getting structures by SIMS and calculation of their electric parameters show the opportunity of conducting layers formation with a thickness of 10 nm and carrier concentration more than 10¹⁸ cm^-3.

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Andrej P. Kokhanenko, Aleksander G. Korotaev, Aleksander V. Voitsekhovskii, Ivan Grushin, Mikhail S. Opekunov, and Gennady E. Remnev "Formation of heavily boron-doped nanolayer in silicon by powerful ion irradiation", Proc. SPIE 3881, Microelectronic Device Technology III, (1 September 1999); https://doi.org/10.1117/12.360564

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