Paper
4 November 1999 Dependence of compositional profile and structural perfection of CdxHg1-xTe graded-gap films on its growing conditions
V. S. Antonov, O. N. Janikay, S. L. Korolyuk, A. I. Rarenko, Yu. P. Stetsko, E. B. Talyanskiy, Z. I. Zakharuk, Oksana O. Bodnaruk
Author Affiliations +
Abstract
Physical-chemical processes of CdxHg1-xTe graded structures (GSS) growing by evaporation condensation- diffusion method on CdTe substrates from HgTe source were analyzed. GSS were melted to the necessary depth and after crystallization were annealed in mercury vapor in order to obtain CdxHg1-xTe structure-perfect epitaxial layers of given composition.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. S. Antonov, O. N. Janikay, S. L. Korolyuk, A. I. Rarenko, Yu. P. Stetsko, E. B. Talyanskiy, Z. I. Zakharuk, and Oksana O. Bodnaruk "Dependence of compositional profile and structural perfection of CdxHg1-xTe graded-gap films on its growing conditions", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368412
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KEYWORDS
Crystals

Mercury

Particles

Cadmium

Solids

Tellurium

Annealing

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