PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
Physical-chemical processes of CdxHg1-xTe graded structures (GSS) growing by evaporation condensation- diffusion method on CdTe substrates from HgTe source were analyzed. GSS were melted to the necessary depth and after crystallization were annealed in mercury vapor in order to obtain CdxHg1-xTe structure-perfect epitaxial layers of given composition.
V. S. Antonov,O. N. Janikay,S. L. Korolyuk,A. I. Rarenko,Yu. P. Stetsko,E. B. Talyanskiy,Z. I. Zakharuk, andOksana O. Bodnaruk
"Dependence of compositional profile and structural perfection of CdxHg1-xTe graded-gap films on its growing conditions", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368412
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
V. S. Antonov, O. N. Janikay, S. L. Korolyuk, A. I. Rarenko, Yu. P. Stetsko, E. B. Talyanskiy, Z. I. Zakharuk, Oksana O. Bodnaruk, "Dependence of compositional profile and structural perfection of CdxHg1-xTe graded-gap films on its growing conditions," Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368412