Paper
4 November 1999 Electronic band parameters: obtaining and peculiarities of InSb1-xBix crystal structures
Ilary M. Rarenko, J. I. Vyklyuk, V. G. Deibuk, S. G. Dremluzhenko, Z. I. Zakharuk, S. M. Nichyi
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Abstract
InSb1-xBix solid solutions monocrystal structures with (Delta) Eg80K equals 0,12eV were obtained using the modified Czochralski, zone and laser melting methods. A band structure of semiconductor InSb1-xBix substitution solid solution is calculated by the empirical pseudopotential method. Spin-orbital interactions are also included in local calculations. Using the virtual-crystal approximation the composition and temperature dependencies of energy gap are studied. The results are in good agreement with available experimental data.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ilary M. Rarenko, J. I. Vyklyuk, V. G. Deibuk, S. G. Dremluzhenko, Z. I. Zakharuk, and S. M. Nichyi "Electronic band parameters: obtaining and peculiarities of InSb1-xBix crystal structures", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368384
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KEYWORDS
Solids

Crystals

Semiconductors

Bismuth

Data modeling

Chemical species

Optical properties

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