Epitaxial layer CdHgTe stress influence on diffusion impurities during creation of photodetectors

Liubomyr S. Monastyrskii

doi:10.1117/12.368407

4 November 1999 Epitaxial layer CdHgTe stress influence on diffusion impurities during creation of photodetectors

Liubomyr S. Monastyrskii

Proceedings Volume 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (1999) https://doi.org/10.1117/12.368407
Event: Material Science and Material Properties for Infrared Optoelectronics, 1998, Kiev, Ukraine

Abstract

We have investigated changing of diffusion migration through thin heteroepitaxial layers of cadmium-mercury-telluride under stress influence, which have created by differences between thermal extension coefficients of layers and substrate. We have analyzed by numerical experiment cases homogeneous and exponential mechanical stress in 2 and 3 layers structure. It was studied the time evolution of diffusion concentration profiles of impurity through epitaxial layers under influence of different mechanical stresses.

Citation Download Citation

Liubomyr S. Monastyrskii "Epitaxial layer CdHgTe stress influence on diffusion impurities during creation of photodetectors", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368407

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