High-quality lead telluride films grown on silicon with buffer porous silicon layers

Sergey P. Zimin; Michail N. Preobrazhensky; Dmitri S. Zimin

doi:10.1117/12.368406

4 November 1999 High-quality lead telluride films grown on silicon with buffer porous silicon layers

Sergey P. Zimin, Michail N. Preobrazhensky, Dmitri S. Zimin

Proceedings Volume 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (1999) https://doi.org/10.1117/12.368406
Event: Material Science and Material Properties for Infrared Optoelectronics, 1998, Kiev, Ukraine

Abstract

The structural characteristics of vacuum deposited PbTe films on Si substrate with buffer porous silicon layer were investigated. It was found, that films have orientation along the growth direction. Electron and optical microscopy data have shown the absence of flaws, pores, metal and chalcogen microinclusions. Mosaic structure with a grain size 20-60 micrometers was detected by selective chemical etching and acoustic microscopy methods. Single-crystal structure of grains was shown from the investigations of x-ray pole figures. It was found that thick amorphous layers on a porous silicon surface change the nature of PbTe films growth.

Citation Download Citation

Sergey P. Zimin, Michail N. Preobrazhensky, and Dmitri S. Zimin "High-quality lead telluride films grown on silicon with buffer porous silicon layers", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368406

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