Synthesis of Er3+-doped silicon-based light emitting material by sol-gel method

Datao Xie; X. G. Wang; Y. Z. Xu; JinGuang Wu; Guang-Xian Xu

doi:10.1117/12.382871

13 April 2000 Synthesis of Er³⁺-doped silicon-based light emitting material by sol-gel method

Datao Xie, X. G. Wang, Y. Z. Xu, JinGuang Wu, Guang-Xian Xu

Proceedings Volume 3942, Rare-Earth-Doped Materials and Devices IV; (2000) https://doi.org/10.1117/12.382871
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

We suggested a new synthesis process, the sol-gel method, to incorporate high concentration of Er³⁺ ions into the silicate film on silicon substrate. The coating solutions with uniformly dispersed metal ions were prepared from Er(NO)₃ solution, Si(OC₂H₅)₄ and ethanol. Spin coating was carried out into a treated mono-crystalline silicon (100) substrate, at a speed of about 4000-rpm for 8s. The precursor films were annealed in air at 500 degree(s)C for 2 hours. Er-related approximately 1.54 micrometers photoluminescence was observed at room temperature. The optimal doped concentrations of Er³⁺ in SiO₂ film was estimated at about approximately 10²¹/cm³. Through characterizations of AFM, FTIR, DTA, TG and EXAFS, we found that: the synthesized film is compact and smooth in microscope; 500 degree(s)C annealing is enough to perform the structure change of gel to glass; and, the Er-O formed complex with coordinate number of 9. Because of the formation of Er-O complex, Er-O-Si can form the next structure in the synthesized film. The configuration could not only increase the optical activity of ions, but also improve the homogeneous of Er³⁺ ions in SiO₂. Thus we demonstrated the sol-gel process is an efficient way to overcome the quench effect of concentration and increase the distribution quality.

Citation Download Citation

Datao Xie, X. G. Wang, Y. Z. Xu, JinGuang Wu, and Guang-Xian Xu "Synthesis of Er³⁺-doped silicon-based light emitting material by sol-gel method", Proc. SPIE 3942, Rare-Earth-Doped Materials and Devices IV, (13 April 2000); https://doi.org/10.1117/12.382871

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