Near-field phase-change recording using a GaN laser diode

Koichiro Kishima; Isao Ichimura; Kenji Yamamoto; Kiyoshi Osato; Yuji Kuroda; Atsushi Iida; Kimihiro Saito

doi:10.1117/12.399331

18 September 2000 Near-field phase-change recording using a GaN laser diode

Koichiro Kishima, Isao Ichimura, Kenji Yamamoto, Kiyoshi Osato, Yuji Kuroda, Atsushi Iida, Kimihiro Saito

Proceedings Volume 4090, Optical Data Storage 2000; (2000) https://doi.org/10.1117/12.399331
Event: Optical Data Storage, 2000, Whistler, BC, Canada

Abstract

We developed a 1.5-Numerical-Aperture optical setup using a GaN blue-violet laser diode. We used a 1.0 mm-diameter super-hemispherical solid immersion lens, and optimized a phase-change disk structure including the cover layer by the method of MTF simulation. The disk surface was polished by tape burnishing technique. An eye-pattern of (1-7)-coded data at the linear density of 80 nm/bit was demonstrated on the phase-change disk below a 50 nm gap height, which was realized through our air-gap servo mechanism.

Citation Download Citation

Koichiro Kishima, Isao Ichimura, Kenji Yamamoto, Kiyoshi Osato, Yuji Kuroda, Atsushi Iida, and Kimihiro Saito "Near-field phase-change recording using a GaN laser diode", Proc. SPIE 4090, Optical Data Storage 2000, (18 September 2000); https://doi.org/10.1117/12.399331

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