High-density plasma FSG charging damage

Ting Cheong Ang; Man Siu Tse; Sang Yee Loong; Y. C. Wong; Wye Boon Loh

doi:10.1117/12.410073

23 August 2000 High-density plasma FSG charging damage

Ting Cheong Ang, Man Siu Tse, Sang Yee Loong, Y. C. Wong, Wye Boon Loh

Proceedings Volume 4182, Process Control and Diagnostics; (2000) https://doi.org/10.1117/12.410073
Event: Microelectronic Manufacturing, 2000, Santa Clara, CA, United States

Abstract

In this work, plasma induced damage resulting from high density plasma undoped silicate glass and fluorinated silicate glass (FSG) deposition processes was studied. The extent of the plasma damage due to the two HDP processes were characterized based on 0.18 micrometers transistor test structures with different antenna ratios. Our results show that the plasma-induced damage from HDP FSG is greater than that from HDP USG. We have developed a novel integration scheme that is effective in reducing the damage from HDP FSG down to levels comparable to that of USG.

Citation Download Citation

Ting Cheong Ang, Man Siu Tse, Sang Yee Loong, Y. C. Wong, and Wye Boon Loh "High-density plasma FSG charging damage", Proc. SPIE 4182, Process Control and Diagnostics, (23 August 2000); https://doi.org/10.1117/12.410073

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