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Coupling between silicon nanoclusters and erbium ions n silicon-rich silica hosts can enhance the technologically important erbium 4f emission at 1535nm and relax the restrictions on pump wavelength. We presents luminescence results showing that the enhancement of the erbium absorption cross-section due to the presence of silicon nanoclusters can be around 4 orders of magnitude. Temperature quenching of luminescence in this material is very weak, indicating that the Auger non-radiative decay channels which limit erbium emission in bulk silicon are largely absent in silicon-rich silica. We also demonstrate broad-band flashlamp pumping of erbium-doped silicon-rich samples with a power efficiency of 0.01 percent. With the growing requirement for broad-band access to telecomms networks and the provision of fiber-to-the-home systems, this material is a promising candidate for use in cheap flashlamp pumped gain elements for use in WDM.
Anthony J. Kenyon,Constantinos E. Chryssou, andChristopher W. Pitt
"Enhancement of Er emission by coupling to silicon nanoclusters: a route to flashlamp-pumped Er amplifiers?", Proc. SPIE 4282, Rare-Earth-Doped Materials and Devices V, (27 April 2001); https://doi.org/10.1117/12.424775
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Anthony J. Kenyon, Constantinos E. Chryssou, Christopher W. Pitt, "Enhancement of Er emission by coupling to silicon nanoclusters: a route to flashlamp-pumped Er amplifiers?," Proc. SPIE 4282, Rare-Earth-Doped Materials and Devices V, (27 April 2001); https://doi.org/10.1117/12.424775