Wafer-level stress data successfully used as early burn-in predictor

Ana Sacedon; Miguel Alonso Merino; Victorino Martin Santamaria; Jesus Inarrea; Francisco J. Sanchez-Vicente; Jesus de la Hoz; Jose Angel Ayucar; Isabel Menendez-Moran; Alvaro Riloba; Carlos Mata; Miguel Recio

doi:10.1117/12.425263

23 April 2001 Wafer-level stress data successfully used as early burn-in predictor

Ana Sacedon, Miguel Alonso Merino, Victorino Martin Santamaria, Jesus Inarrea, Francisco J. Sanchez-Vicente, Jesus de la Hoz, Jose Angel Ayucar, Isabel Menendez-Moran, Alvaro Riloba, Carlos Mata, Miguel Recio

Author Affiliations +

Proceedings Volume 4406, In-Line Characterization, Yield, Reliability, and Failure Analysis in Microelectronic Manufacturing II; (2001) https://doi.org/10.1117/12.425263
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom

Abstract

We show that a simple post-stress test can provide a good early reliability indicator. The defect types that have been revealed by this post-stress test are two types of conductive particles on metal levels. This early indicator has been of great value when dealing with potentially contaminated wafers/lots and to evaluate and to prioritize the corrective actions to solve the line issues.

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Ana Sacedon, Miguel Alonso Merino, Victorino Martin Santamaria, Jesus Inarrea, Francisco J. Sanchez-Vicente, Jesus de la Hoz, Jose Angel Ayucar, Isabel Menendez-Moran, Alvaro Riloba, Carlos Mata, and Miguel Recio "Wafer-level stress data successfully used as early burn-in predictor", Proc. SPIE 4406, In-Line Characterization, Yield, Reliability, and Failure Analysis in Microelectronic Manufacturing II, (23 April 2001); https://doi.org/10.1117/12.425263

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