Ultraviolet radiation sensors on the basis of semiconductors

Valerian Dorogan; Tatiana Vieru; Mihail Manole; Roxana Savastru; Tudor Zisu

doi:10.1117/12.432818

29 June 2001 Ultraviolet radiation sensors on the basis of semiconductors

Valerian Dorogan, Tatiana Vieru, Mihail Manole, Roxana Savastru, Tudor Zisu

Proceedings Volume 4430, ROMOPTO 2000: Sixth Conference on Optics; (2001) https://doi.org/10.1117/12.432818
Event: ROMOPTO 2000: Sixth Conference on Optics, 2000, Bucharest, Romania

Abstract

This paper deals with elaborating and manufacturing of new structure of UV radiation sensors on the basis of single- crystal Si. The structure consists of two photoactive cells, differentially connected to loading resistor. One cell is covered with a layer, transparent for visible and IR radiation and non-transparent for UV radiation. Differential connection excludes the common for both cells components. Thus, the photocurrent of differential sensor is proportional only to UV radiation intensity.

Citation Download Citation

Valerian Dorogan, Tatiana Vieru, Mihail Manole, Roxana Savastru, and Tudor Zisu "Ultraviolet radiation sensors on the basis of semiconductors", Proc. SPIE 4430, ROMOPTO 2000: Sixth Conference on Optics, (29 June 2001); https://doi.org/10.1117/12.432818

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