Measurement of optoelectronic lifetime in imaging process of silver halide material

Guangsheng Fu; Shaopeng Yang; Xiao-Wei Li; Xiaoyong Hu

doi:10.1117/12.445752

16 October 2001 Measurement of optoelectronic lifetime in imaging process of silver halide material

Guangsheng Fu, Shaopeng Yang, Xiao-Wei Li, Xiaoyong Hu

Proceedings Volume 4602, Semiconductor Optoelectronic Device Manufacturing and Applications; (2001) https://doi.org/10.1117/12.445752
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China

Abstract

The optoelectron lifetimes in imaging process are directly related to photographic efficiency of silver halide emulsion. The lifetime of the free electrons and shallow trapped electrons decide the sensitivity and other efficiency of silver halide emulsion. Modern emulsion technology uses the incorporation of well-defined phase boundaries in emulsion crystals to reduce the recombination rate of optoelectrons and optoholes after actinic exposure. This process leads to an enhanced photographic efficiency due to the increasing optoelectron lifetime. Microwave absorption and dielectric spectrum detection technology is a powerful tool that could quickly detect the change of dielectric function of emulsion film. This technology enables contactless measurement of the optoelectron lifetime. YAG super-fast pulse laser (355 nm, 35 ps) is used as an exposure source. Signals of the free optoelectrons and shallow trapped electrons are the decay curve versus the time. The concentration of the optoelectrons depends on the maximum concentration and decay rate constant. The reciprocal of the slop of this straight line is the lifetime of the optoelectrons. The lifetime and decay curve of the free optoelectrons and shallow trapped electrons of different emulsion samples have been measured and analyzed.

Citation Download Citation

Guangsheng Fu, Shaopeng Yang, Xiao-Wei Li, and Xiaoyong Hu "Measurement of optoelectronic lifetime in imaging process of silver halide material", Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); https://doi.org/10.1117/12.445752

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