Structural analysis of a new phase change optical memory material: Ag-Sb-Te

Yagya Deva Sharma; Promod K. Bhatnagar

doi:10.1117/12.445734

16 October 2001 Structural analysis of a new phase change optical memory material: Ag-Sb-Te

Yagya Deva Sharma, Promod K. Bhatnagar

Proceedings Volume 4602, Semiconductor Optoelectronic Device Manufacturing and Applications; (2001) https://doi.org/10.1117/12.445734
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China

Abstract

Phase change optical recording disks using have been found to demonstrate long stability of the amorphous recording marks. Structural analysis of the material were studied by X Ray Diffraction (XRD), Scanning electron microscopy (SEM) and Transmission electron microscopy (TEM) respectively. The films were studied for both the cases: before and after annealing and it was concluded that the alloy (Ag-Sb-Te) could be used as a phase change optical memory material.

Citation Download Citation

Yagya Deva Sharma and Promod K. Bhatnagar "Structural analysis of a new phase change optical memory material: Ag-Sb-Te", Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); https://doi.org/10.1117/12.445734

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